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| THDT58S1 THDT58S Application Specific Discretes A.S.D.TM FEATURES CROWBAR PROTECTION DUAL ASYMMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 s for THDT58S. - IPP = 35 A, 10/1000 s for THDT58S1. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 58 V. BREAKOVER VOLTAGE = 80V max SIP 3 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Its ion-implanted technology confers its excellent electrical characteristics. This is why this device easily fulfils the main protection standards which are related to the overvoltages suppression on telecom lines. The product pinout is compatible with TO202 and TO220 packages. COMPLIESWITHTHE FOLLOWING STANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : CNET I3124: BELLCORE TR-NWT-001089 : (*) with series resistors or PTC. SCHEMATIC DIAGRAM NC Tip GND Ring 1 2 3 4 10/700 s 5/310 s 10/700 s 5/200 s 1.2/50 s 1/20 s 0.5/700 s 0.2/310s 10/1000s 10/1000s 1kV 25A 2kV 45/50A(*) 1.5kV 40A 1kV 25A 1kV 35/75A (*) TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 - Ed: 3 1/7 THDT58S / THDT58S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 s 8/20 s 2/10 s t = 20 ms 67% VBR -55 to +150 +150 260 THDT58S1 35 70 80 20 THDT58S 75 150 30 5 -40 to +150 +150 260 Unit A ITSM dV/dt Tstg Tj TL Non repetitive surge peak on-state current (F = 50Hz) Critical rate of rise of off-state voltage A kV/s C C C Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000s tr =10s 5/310s tr =5s 2/10s tr =2s tp=1000s tp=310s tp=10s % I PP 100 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 80 Unit C/W 2/7 THDT58S / THDT58S1 ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VBR VBO IH VF IBO IPP C Parameter Stand-offvoltage Leakage current at VRM Breakdown voltage Breakover voltage Holding current Forward Voltage drop Breakover current Peak pulse current Capacitance Ipp IH IBO VBO VBR VRM IRM VF V I IF 1 - PARAMETER RELATED TO THE DIODE LINE/GND Symbol VF IF = 5 A Test conditions tp = 500 s Value 5 Unit V 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR Type IRM @ VRM max. A V VBR @ IR min. V mA VBO @ IBO max. V IH min. note 2 mA C max. note 3 pF min. note1 mA max. mA THDT58S THDT58S1 Note 1 : Note 2 : Note 3 : 10 10 56 56 58 58 1 1 80 80 150 50 800 800 150 150 400 200 See the reference test circuit 1 for IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz. 3/7 THDT58S / THDT58S1 REFERENCE TEST CIRCUIT 1 : t TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 R D.U.T. - VP V BAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max. 4/7 THDT58S / THDT58S1 Fig. 1: Relative variation of holding current junction temperature. Fig. 2: Capacitance versus reverse applied voltage (typical values). 1.0 0.0 Fig. 3: Peak on state voltage versus peak on state current (typical values). Fig. 4: Peak forward voltage drop versus peak forward current (typical values). 2.0 1.0 Fig. 5: Surge peak current versus overload duration (THDT58S). ITSM(A) 40 F=50Hz Tj initial=25 C Fig. 6: Surge peak current versus overload duration (THDT58S1). ITSM(A) 30 F=50Hz Tj initial=25 C 25 20 30 20 15 10 10 5 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3 5/7 THDT58S / THDT58S1 APPLICATION CIRCUIT Typical SLIC protection concept RING GENERATOR -V bat LINE A T E S T R E L A Y S LINE B PTC TIP RING RELAY SLIC RING THBTXXX PTC THDT58S THDT58S1 FUNCTIONAL DESCRIPTION Line A Tip Line A Protection = - For positive Surges versus GND, the diode D1 will conduct - For negative Surges versus GND, the Protection device P1 will trigger at a maximum voltage equal to the VBO. Line B Protection = - For Surges on line B, the operatingmode is the same, D2 or P2 is activated. D1 P1 D2 P2 Line B Ring 6/7 THDT58S / THDT58S1 ORDER CODE THDT 58 S 1 35A VERSION ASYMETRICAL TRISIL Package : S = SIP3 BREAKDOWN VOLTAGE MARKING Type THDT58S THDT58S1 Marking THDT58S THDT58S1 PACKAGE MECHANICAL DATA. SIP 3 Plastic B REF. A I A DIMENSIONS Millimetres Inches Min. Typ. Max. Min. 7.10 2.80 1.50 0.50 1.35 0.38 2.54 7.62 10.50 3.30 1.50 0.130 0.059 1.75 0.053 0.50 0.015 0.100 0.200 0.413 0.110 1.90 0.059 10.15 0.020 0.069 0.020 Typ. Max. 0.280 0.075 0.400 a1 a2 B b1 b2 c1 a2 b1 b2 Z e e3 a1 L c1 e e3 I L Z Packaging : Standard packaging is in antistatic tubes Weight : 0.55g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7 |
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